Reservation  -     

Center of MicroNanoTechnology CMi

 

Available PVD targets

 


LAB 600 H

E-Beam Evaporation : Metals

Ag

[99.99%]
Al

[99.999%]
Au

[99.99%]
Cr

[99.6%]
Ge

[99.999%]
In

[99.999%]
Mo

[99.95%]
Ni

[99.95%]
NiFe 19%

[99.9%]
Nb

[99.9%] (Nb + Ta)
Ta = 530ppm
Pd

[99.95%]
Pt

[99.95%]
Si

[99.999%]
Ta

[99.9%]
Ti

[99.9%]
Y

[99.9%]










E-Beam Evaporation : Oxides

Al2O3

[99.99%]
ITO 90:10 wt%
In2O3 - SnO2


[99.99%]
La2O3


[99.99%]
MgO

[99.5%]
SiO2

[99.99%]
Ti2O3


[99.5%]
Ti3O5


[99.5%]
Y2O3


[99.99%]
ZrO2


[99.3%]










E-Beam Evaporation : Fluorides

MgF2


[99.99%]












 


EVA 600

E-Beam Evaporation :

Al

[99.999%]
Cr

[99.6%]
Co

[99.6%]
Ni

[99.95%]
NiFe 19%

[99.9%]
NiCr 19%
Ni = 74.8%
Cr = 19.6%
Fe = 4.2%
Mn=0.4%, Ti=0.4%
Cu=0.2%, Si=0.2%
Ti

[99.9%]

 

Resistance Heated Evaporation :

Bi

[99.999%]

Cu

[99.99%]

Fe



Sn

[99.999%]
Y

[99.9%]








Resistance Heated Evaporation : Materials that must be ordered through the CMi user interface

Ag

[99.99%]

Au

[99.99%]

In

[99.999%]

















Resistance Heated Evaporation : Authorized materials, but not supplied by CMi

MoO3



























 


EVA 760

E-Beam Evaporation : Metals

Al

[99.999%]
Au

[99.99%]
Cr

[99.6%]
Cu

[99.99%]
Ni

[99.95%]
Pt

[99.95%]
Ti

[99.9%]

 


VACO 250

 

Resistance Heated Evaporation : Materials that can be ordered through the CMi user interface

Ag

[99.99%]

Al

[99.999%]

Au

[99.99%]

Cr

[99.6%]

Cu

[99.99%]

In

[99.999%]





Resistance Heated Evaporation : Materials that can be supplied by CMi in small quantities

Bi

[99.999%]

Ga

[99.99%]
Se

[99.999%]
Sn

[99.999%]












Resistance Heated Evaporation : Authorized materials, but not supplied by CMi

AuGe12%



AgCl



Ca



LiF



Mg



MoO3







Pb



PbSn























 


SPIDER 600

DC Sputtering :

Al


[99.9995%]
Al:Si 1%


[99.9995%]
Al:Si 2%
Si 1.95 wt% photometry
[99.9995%]
Al:Si 4%
Si 3.82 wt% photometry
[99.9995%]
Mo



[99.99%]
Nb



[99.9%]
Ta = 334ppm
Pt



[99.95%]
Ru



[99.95%]
Si
Boron doped
5-30 mΩ.cm
2.1019 - 1018 at/cm3
[99.9999%]
Film: amorphous Si
Ta


[99.98%]
Ti


[99.995%]
W



[99.95%]




Pulsed DC Sputtering :

Al


[99.9995%]

Film: AlN* only
AlSc 6.4 at%
(Sc 10.2 wt%)

[99.9%]

Film: AlScN* only
AlSc 17.5 at%
(Sc 26.1 wt%)

[99.99%]

Film: AlScN* only








RF Sputtering :

Al2O3


[99.99%]
GeO2


[99.99%]
ITO 90:10 wt%
In2O3- SnO2


[99.99%]
MgO


[99.95%]
Ru

[99.95%]

Films: Ru, RuO2*
SiO2


[99.99%]
Ta2O5


[99.99%]
Ti

[99.995%]

Films: Ti, TiN*, TiO2*
TiO2


[99.5%]
V2O5


[99.9%]








(*) Reactive sputtering

 


DP 650

DC Sputtering :

Ag

[99.99%]
Al

[99.9995%]
Al:Si 1.0%

[99.999%]
Au

[99.99%]
Cr

[99.95%]
Cu

[99.995%]
Ir

[99.9%]
Film: Ir, IrOx*
Mo


[99.95%]
Pd


[99.95%]
Pt


[99.99%]
Sb


[99.999%]
Si
Boron doped
5-30 mΩ.cm
[99.9999%]
Sn


[99.998%]
Ta


[99.99%]
Ti


[99.995%]
W

[99.95%]
Film: W, WOx*
W:Ti 10%

[99.99%]












RF Sputtering :

Fe:Co:B
60:20:20 at%
[99.9%]
IGZO
InGaZnOx
[99.99%]
Ni

[99.95%]
Ni:Cu
50:50 at%
[99.95%]
Film: NiCuOx*
TaN

[99.95%]
TiN

[99.5%]
TiO2

[99.99%]

(*) Reactive sputtering

 


BAS 450

DC Sputtering :

Al


Films: Al, Al2O3*
Al:Si 0.5%
Al:Si 0.8%

Al:Si 1.0%

[99.999%]
Al:Si 1.2%

Al:Si 1.5%

Al:Cu:Si 4%,1%
(95:4:1)

Au

[99.99%]
Cr
Cu

Hf


Films: Hf, HfOx*

Mo

Nb

[99.9%]


Pd

Pt

[99.95%]
Sb

Ta


Films: Ta,TaOx*, TaNx*

Ti

[99.995%]




W

[99.95%]
WSi2

[99.5%]
W:Ti 10%
(wt%)
[99.99%]
Zr

[99.2%] (Zr + Hf)
Hf < 4.5%
Films: Zr,ZrOx*








RF Sputtering :

LaNiO3

[99.9%]
SiO2

Si

TiO2







(*) Reactive sputtering

 


OERLIKON CLUSTERLINE at PV-LAB (IMT-Neuchâtel)

Sputtering deposition of composite materials : Transparent Conductive Oxides (TCOs) and other

Conductive
metal oxides


ZnO

Zn
GZO

Ga,Zn
ITO

In,Sn
IZO

In,Zn
ZTO

Zn,Sn
IWO

In,W
Conductive
metal oxides


IGZO

In,Ga,Zn
IZTO

In,Zn,Sn
















Other available thin films

MgF2
SiO2
Ti
TiO