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Center of MicroNanoTechnology CMi

nLoF Results


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AZ nLOF 2020 Results and Gallery

Lift-off of the deposited material is done by dissolving the resist in a solvent is the last step of the process. The success of this step is largly dependant on:

In CMI the lift-off is performed with NMP (Remover 1165 commercial product name) at room temperature. This method is prefered to the use of acetone which may cause safety problems and which is difficult to process without residual of metal particules or resist. Assisted dissolution with ultrasonic wave generator is available. Equipment available for lift-off is "Plade Solvent, lithography wet bench"



Negative slope resist profile obtained with 3um thick nLOF 2020, exposed at 100mJ/cm2, and developed with two different durations.


Critical Dimension for vertical lines structure: Layout was 1:1 duty ratio with 1.2µm line width (pitch = 2.4µm).

Negative slope resist profile (As shown by this tilted angle of view)


Low proximity effect for exposure dose = 70mJ/cm2
Duty ratio variation 1:2, 1:1 for 1.2µm line width (corresponding pitch = 3.6, 2.4µm).

Negative slope resist profile (As shown by this tilted angle of view)

nLoF03 Evidence for proximity effect for exposure dose = 50mJ/cm2
Duty ratio 1:1 for 1.5µm line width (corresponding pitch = 3.0µm).


Very thin nLoF for E-beam and UV Lithography: Preliminary

preliminaire1 UV-Lithography; PR thickness=330nm on Si; Hard Contact Exposure near threshold limit; Estimated slope resist angle (-20°)
Exposure dose = 38mJ/cm2 (broad band)

270nm on Si; Hard Contact Exposure; overexposed (50mJ/cm2) . Sub-harmonic half period residues are visible in the gap.