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Center of MicroNanoTechnology CMi

nLoF 2000 Expose


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AZ nLOF 2020 Exposure


AZ nLOF 2020 Exposure Dose

!Important! AZ nLOF is a negative resist (image reversal). Unexposed area results in open area after development. Consequently, after resist dissolution, the deposited material remains on the substrate only in unexposed areas.

Some comments:

The following table lists the recommended dose to crosslink the surface of nLOF layers coated on silicon wafers. It is recommended to perform a contrast curve / exposure matrix calibration for wafers other than silicon.

Illumination:  Broadband* i-line (355-365 nm) h-line (405 nm)
Equipment:  MABA6, MA6 Gen3 (no filter) VPG 200, MA6 Gen3 (filter), MJB4  MLA 150
PR thickness [µm]  Dose [mJ/cm2]+  Dose [mJ/cm2]++  Dose [mJ/cm2]+++
1.4 -- 3 >180 >90 >150

* Mercury Lamp, Mask Aligner with UV400 configuration & no filter / + Based on intensity readings from Süss optometer broadband CCD / ++ Based on intensity readings from Süss optometer i-line CCD / +++ Based on MLA150 internal dose measurements



Direct laser writers