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Positive resists on LOR Expose


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LOR 5A Exposure


LOR 5A bilayer Exposure Dose

!Important! Exposed area results in open area after development. Consequently, after resist dissolution, the deposited material remains on the substrate only in exposed areas.

The following table lists the recommend dose "to clear" for bilayers of LOR 5A and positive tone photoresist coated on silicon wafers. It is recommended to perform a contrast curve / exposure matrix calibration for wafers other than silicon.

Recommended exposure doses for the positive resist are increased compared to standard values, due to the presence of the under LOR 5A sacrificial layer which reduces light reflexion on the substrate.

  Illumination:  Broadband* i-line (355-365 nm) h-line (405 nm)
  Equipment:  MABA6, MA6 Gen3 (no filter) VPG 200, MA6 Gen3 (filter), MJB4  MLA 150
Positive resist PR thickness [µm]  Dose [mJ/cm2]+  Dose [mJ/cm2]++  Dose [mJ/cm2]+++
AZ ECI 3007 0.6 110 105 115
AZ 1512 HS 1.1 40 42 70
AZ 1512 HS 1.5 65 68 105

* Mercury Lamp, Mask Aligner with UV400 configuration & no filter / + Based on intensity readings from Süss optometer broadband CCD / ++ Based on intensity readings from Süss optometer i-line CCD / +++ Based on MLA150 internal dose measurements



Direct laser writers