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Center of MicroNanoTechnology CMi

AZ ECI Expose

 

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AZ ECI 3000 Exposure

IMPORTANT :

Good result cannot be obtained without a minimum rehydratation delay which allows water molecules to diffuse homogenoueously in the freshly coated layer. Without sufficient water content chemical reactions induced by photons cannot be completed. Please respect the minimum rehydratation time given in the following table (for normal cleanroom relative humidity conditions (≥40 RH)).

PR thickness [m]  Minimum rehydratation time [hour:min] Remark
0.6 ...  2.0  < 00:02 Delay included in automatic wafer handling 
 3.0  00:03 Delay included in automatic wafer handling 
 4.0 00:05
 5.0 00:07

 Note: Diffusion time is largely dependant on relative humidity. Dry air with relative humidity smaller by -2.0 RH double the rehydratation time.

 

AZ ECI 3000 Exposure Dose

The following table lists the recommend dose "to clear" for AZ ECI 3000 photoresist series coated on silicon wafers. It is recommended to perform a contrast curve / exposure matrix calibration for wafers other than silicon.

Illumination:  Broadband* i-line (355-365 nm) h-line (405 nm)
Equipment:  MABA6, MA6 Gen3 (no filter) VPG 200, MA6 Gen3 (filter), MJB4  MLA 150
PR thickness [m]  Dose [mJ/cm2]+  Dose [mJ/cm2]++  Dose [mJ/cm2]+++
0.6 96 100 110
0.75 104 110 120
1 115 120 130
1.2 128 125 145
1.5 145 150 165
2 185 190 210
3 260 270 295
4 330 350 380
5 415 430 470

* Mercury Lamp, Mask Aligner with UV400 configuration & no filter / + Based on intensity readings from Süss optometer broadband CCD / ++ Based on intensity readings from Süss optometer i-line CCD / +++ Based on MLA150 internal dose measurements

Equipment

Mask-aligners

Direct laser writers