Reservation  -     

Center of MicroNanoTechnology CMi

AZ ECI 3000 Develop

 

 Use the blinking arrows to step back or forward between the process steps

 

 

AZ ECI 3000 Development

 

The recommended developer for AZ ECI 3000 is MF CD 26 (or AZ 726 MIF), an organic solution based upon TMAH.

IMPORTANT:
After development, a spin-rinse-dryer (SRD) step with DI water is mandatory to avoid cross contamination and damage on equipments (chuck in etcher) in further processing steps.

AZ ECI 3000 on ACS200 Gen 3

Development sequences for AZ ECI 3000 on the ACS200 Gen 3 are listed below:

Sequence Number
Recipe name PR thickness [m]
Total contact time [s]
0921
CMiDev.AZECI3007 0um62.spray
0.62
27
0922
CMiDev.AZECI3007 0um75.spray
0.75
32
0923
CMiDev.AZECI3007 1um0.spray
1
37
0924
CMiDev.AZECI3007 1um2.spray
1.2
41
0925
CMiDev.AZECI3007 1um5.spray
1.5
47
0926
CMiDev.AZECI3027 2um0.puddle
2
72
0927
CMiDev.AZECI3027 3um0.puddle
3
108
0928
CMiDev.AZECI3027 4um0.puddle
4
137
0929
CMiDev.AZECI3027 5um0.puddle
5
162

For thin resist layers, spray method is used for development. For thick resist layers, puddle method is used with intermediates spin-clean steps. Hardbake at 100°C for 2 minutes is applied in order to improve the chemical stability of the resist.

AZ ECI 3000 on RiteTrack 88

Standard recipes are listed below:

Recipe name PR thickness [m] Total contact time [s]
Dev_AZ_ECI_0um6
0.6
34
Dev_AZ_ECI_1um
1.0
36
Dev_AZ_ECI_1um2
1.2
38
Dev_AZ_ECI_1um5
1.5
41
Dev_AZ_ECI_2um
2
51
Dev_AZ_ECI_3um
3
56
Dev_AZ_ECI_4um
4
66
Dev_AZ_ECI_5um
5
76

The developement consists of an initial spray dispense followed by puddle method. A moderate hardbake with large gap is included in these recipe to improve the thermal stability of the resist.