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Center of MicroNanoTechnology CMi

AZ9200 Expose

 

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AZ 9200 Exposure

IMPORTANT :

Good result cannot be obtained without a minimum rehydratation delay which allows water molecules to diffuse homogenoueously in the freshly coated layer. Without sufficient water content chemical reactions induced by photons cannot be completed. Please respect the minimum rehydratation time given in the following table (for normal cleanroom relative humidity conditions (≥40 RH)).

PR thickness [m]  Minimum rehydratation time [hour:min] Remark
 < 3.0  < 00:02 Delay included in automatic wafer handling 
 4.0  00:04
 5.0 00:08
 8.0 00:20
 10.0 00:30
 14.0 01:00

 Note: Diffusion time is largely dependant of relative humidity. Dry air with relative humidity smaller by -2.0 RH double the rehydratation time.

AZ 9200 Exposure Dose

The following table lists the recommend dose "to clear" for AZ 9200 photoresist series coated on silicon wafers. It is recommended to perform a contrast curve / exposure matrix calibration for wafers other than silicon.

Illumination:  Broadband* i-line (355-365 nm) h-line (405 nm)
Equipment:  MABA6, MA6 Gen3 (no filter) VPG 200, MA6 Gen3 (filter), MJB4  MLA 150
PR thickness [m]  Dose [mJ/cm2]+  Dose [mJ/cm2]++  Dose [mJ/cm2]+++
2 190 175 130
3 240 220 165
4 300 270 200
5 360 330 240
8 460 420 340
 10 555 470 390
 14 660 580 490

* Mercury Lamp, Mask Aligner with UV400 configuration & no filter / + Based on intensity readings from Süss optometer broadband CCD / ++ Based on intensity readings from Süss optometer i-line CCD / +++ Based on MLA150 internal dose measurements

Equipment

Mask-aligners

Direct laser writers