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AZ9200 Develop

 

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AZ 9200 Development

 

The recommended developer for AZ 9200 is AZ 400K (diluted in water 1:3.5), an organic solution based upon KOH. Development with AZ 400K will result in a sharper edge profile.

IMPORTANT:
After development, a spin-rinse-dryer (SRD) step with DI water is mandatory to avoid cross contamination and damage on equipments (chuck in etcher) in further processing steps.

AZ 9200 on ACS200 Gen 3

Development sequences for AZ 9200 on the ACS200 Gen 3 are listed below:

Sequence Number
Recipe name PR thickness [m]
Total contact time [s]
0941
CMiDev.AZ9207 0um65.puddle
0.65…0.85
58
0945
CMiDev.AZ9221 2um0.puddle
2
81
0946
CMiDev.AZ9221 3um0.puddle
3
102
0947
CMiDev.AZ9221 4um0.puddle
4
111
0949
CMiDev.AZ9260 6um0.puddle
6
148
0950
CMiDev.AZ9260 8um0.puddle
8
230
0951
CMiDev.AZ9260 10um0.puddle
10
300
0952
CMiDev.AZ9260 15um0.puddle
15
400
0953
CMiDev.AZ9260 20um0.puddle
20
561

Puddle method is used for the development with intermediates spin-clean steps. No Softbake is applied in order to preserve vertical PR side walls.

AZ 9221 on RiteTrack 88

Standard recipes are listed below:

Recipe name PR thickness [m] Total contact time [s]
Dev_AZ92xx_2um
2
85
Dev_AZ92xx_3um
3
105
Dev_AZ92xx_4um
4
125

The developement consists of an initial spray dispense followed by two steps of puddle method, with intermediate DI water rinse steps. A short bake (10 sec) with large gap is used to dry the wafer backside.

AZ 9260 on EVG 150

Standard development programs: Databade file name: AZ9260_5to14um_ ....

Recipe name PR thickness [m] Total contact time [s]
SprayDev_5mu_AZ9260
4…6
110
SprayDev_8mu_AZ9260
7…9
140
SprayDev_10mu_AZ9260
9…12
180
SprayDev_14mu_AZ9260
12…17
230

The development consists in spray dispense strokes over the wafer together with chuck rotation. No Softbake is applied in order to preserve vertical PR side walls.

AZ 9260 on DV10 (development of AZ9260 multilayers)

Recipe name PR thikness [m] Total contact time [s]
AZ92xx_upto3um
2…3
120
AZ92xx_4um
4
180
AZ9260_5um
5
240
AZ9260_8um
8…10
360
AZ9260_12um
10…13
480
AZ9260_15um
13…16
660

Spray dispense with chuck rotation is used for developing thick resist layer. No Softbake is applied in order to preserve vertical PR side wall

AZ 9200 manual development

Due to its low photo-initiator content, AZ 9200 has a lower development rate compared to other positive resists. Typical development times in diluted AZ 400K will be around 45 seconds per micron of resist.