Reservation  -     

Center of MicroNanoTechnology CMi

AZ40XT spin

 

 Use the blinking arrows to step back or forward between the process steps

 

 

AZ 40XT Coating

 

AZ 40XT on ACS200 Gen 3

On the ACS200 Gen 3 coater, standard coating sequences are identified by a four digit code "XXXX". The first two digits identify the options (surface treatment, edge bead removal, ...) while the last two digits identify the AZ 40XT resist (syringe configuration) and thickness.

First digits Coating option --> Last digits Spin speed [rpm], time [s] Softbake time [mm:ss] PR thickness [µm]
01XX
HMDS / NoEBR (topEC) XX61 1800, 18s 07:30
~40
02XX
Dehydrate / NoEBR (topEC) XX62 1800, 5s 10:35
~60
03XX
HMDS / EBR XX63 1100, 5s 13:45
~85
04XX
Dehydrate / EBR

Reduction of the spin time is used to control the final thickness and to achieve thicker layers compared to the usual 45s spin time. Softbake is performed with a ramp in the proximity setting to prevent the formation of bubbles during outgassing. Softbake temperature is 125°C for all options.

Alternate coating sequences (for different bake temperatures, spin speed, or options) can be edited based on user's requests. Please contact the photolithography staff for guidance.

 

AZ 40XT on manual coaters

Please use the following spincurves when selecting the rotation speed to achieve a specific thickness. This spincurve assumes a spin-time of 20s, together with center dispence of AZ 40XT.

   AZ 40XT Spincurve

On a contact hotplate, the softbake temperature should be 120°C and softbake time 3 minutes plus an additionnal 1 minute per 10µm of resist. To prevent bubble formation, it is recommended to deposit the wafer on the hotplate at room temperature (RT) and then let the temperature increase to 120°C.