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Center of MicroNanoTechnology CMi

AZ40XT Expose

 

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AZ 40XT Exposure

NOTE:

AZ 40XT is a chemically amplified ultrathick positive resist. Compared to conventional positive resists, it does not require any delays for rehydratation or N2-outgassing which greatly reduces the process time of the resist.

AZ 40XT Exposure Dose

The following table lists the recommend dose "to clear" for AZ 40XT photoresist series coated on silicon wafers. It is recommended to perform a contrast curve / exposure matrix calibration for wafers other than silicon.

Illumination:  Broadband* i-line (355-365 nm) h-line (405 nm)
Equipment:  MABA6, MA6 Gen3 (no filter) VPG 200, MA6 Gen3 (filter), MJB4  MLA 150
PR thickness [m]  Dose [mJ/cm2]+  Dose [mJ/cm2]++  Dose [mJ/cm2]+++
40 - 350 -
60 - 525 -
85 - 750 -

* Mercury Lamp, Mask Aligner with UV400 configuration & no filter / + Based on intensity readings from Süss optometer broadband CCD / ++ Based on intensity readings from Süss optometer i-line CCD / +++ Based on MLA150 internal dose measurements

Equipment

Mask-aligners

Direct laser writers