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AZ1500 Develop

 

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AZ 1512 HS Development

 

The recommended developer for AZ 1512 HS is AZ 726 MIF (or MF CD 26), an organic solution based upon TMAH.

IMPORTANT:
After development, a spin-rinse-dryer (SRD) step with DI-water is mandatory to avoid cross contamination and damage on equipments (chuck in etcher) in further processing steps.

AZ 1512 HS on ACS200 Gen 3

Development sequences for AZ 1512 HS on the ACS200 Gen 3 are listed below:

Sequence Number Recipe name PR thickness [m] Total contact time [s]
0901
CMiDev.AZ1512 1um16.puddle
1.1
~30
0903
CMiDev.AZ1512 1um34.puddle
1.3
~45
0904
CMiDev.AZ1512 1um5.puddle
1.5
~45
0905
CMiDev.AZ1512 2um0.puddle
2.0
~60

Puddle method is used for the development with intermediates spin-clean steps. Hardbake of the resist is applied after the development, at 112°C for 2 minutes.

AZ 1512 HS on EVG150

Standard development programs: Database file name: AZ1512_1to2um...

Recipe name PR thickness [m] Total contact time [s]
Dev_AZ1512_upto1um3
1.0 … 1.3
40
Dev_AZ1512_1um3to1um7
1.3 … 1.7
50
Dev_AZ1512_upto3um
1.8 … 2.9
65

The developement consists of a short spray dispense followed by puddle method. To maintain a high wafer throughput on the EVG 150, no hardbake is applied for standard AZ1512 recipes.

AZ1512 HS manual development

AZ1512 HS is specially formulated for high development rate (HS = high speed). Typical development times in AZ726 MIF will be around 20-30 seconds per micron of resist.