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Center of MicroNanoTechnology CMi

DV10 Programing

 

DV10 «Mask and thick positive resist developer»
« Développeuse de masque ET résine positive épaisse» DV10

Programmes standards

AZ9260; Developer #2 AZ 400K:DI 1:4

Command

KeyCode / Sequence

Paramètres

Total [min:sec]

Purge

D2

8 sec.

00:10

Developer

Puddle + oscil.

2 scans +

00:15

Developer

Puddle cycle

60 + 45 + 30

 

Developer

Puddle cycle

30 + 30 + 15

 

Rinse

Scan

2x

03:15

Dry

 

 

00:40

 

AZ9260; Developer #2 AZ 400K:DI 1:4

CommandK

KeyCode / Sequence

Paramètres

Total [min:s.]

Purge

D2

8 s.

0:10

Developer

Puddle + oscil.

2 scans + 30 s.

Developer

Puddle cycle

90 + 60 + 45 s.

Developer

Puddle cycle

45 + 45 + 30 s.

7:00

Rinse

Scan

15 s.

 

Dry

0:40


Cr-blank, #1 MP 351:DI 1:5

Command

KeyCode / Sequence

Paramètres

Total [min:s.]

Purge

D1

10 s.

0:12

Developer

Puddle

1scan wetting +2scans 15s.

Developer

Puddle cycle

20 + 20 + 15 s.

0: 45

Developer

Puddle cycle

20 + 15 + 10 s.

0: 45

Rinse

Scan 3x

Dry

0:50

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