Reservation  -     

Center of MicroNanoTechnology CMi

Materials

  1. Chemical products
  2. Wafers
  3. Masks

I. Chemicals

Acids and bases

Product Composition Ratio in volume
Hydrofluoric Acid concentrated 50% MOS HF 50%  
Sulfuric Acid MOS H2SO4 96%  
Buffered Hydrofluoric Acid, BE 7-1 NC1 MOS NH4F 40% + HF 50%

7:1

Buffered Hydrofluoric Acid, BE 25-1 MOS NH4F 40% + HF 50

25:1

Phosphoric Acid 85% VLS H3PO4 85%  
Chlorhydric Acid 37% MOS HCl 37%  
Nitric Acid (69.5%) HNO3 69.5%  
Potassium Hydroxyde MOS KOH 40%  
Polysilicon etch HNO3 70% + HF 50% + H2 O

200:12:80

Aluminium etch ANP VLSI H3PO4 85% + CH 3COOH 100% + HNO3 70%

83:5.5:5.5

Chromium etch CR7 MOS (NH4)2 Ce(NO3)6;  HClO 4  
Au etch KI (50g.), I2 (12.5g.), H2 O (500 ml)  
Freckle etch H3PO4 85% + CH 3COOH 100% + HNO3 70% + HBF4 ?%

75:5:3:?

Pad etch MOS, Silox etch NH4F 40% + CH3COOH 100% + H 2O

4:4:2

Hydrogen peroxide 30% MOS H2O2 30%  
Ammonium Fluorid 40% NH4  
Ammoniaque 28% MOS NH4OH 28%  

Resists and developers

Product Remarks
S 1805 photosensitive positive, 0.4 - 1.0 µm
S 1805 G2 photosensitive positive, 0.4 - 1.0 µm
S 1813 photosensitive positive, 1.0 - 1.8 µm
S 1813 G2 photosensitive positive, 1.0 - 1.8 µm
S 1818 photosensitive positive, 1.3 - 3.9 µm
S 1818 G2 photosensitive positive, 1.3 - 3.9 µm
AZ 1512 HS photosensitive positive, 1 - 2 µm
AZ 9260 photosensitive positive, 5 - 15 µm
TI 35 ES photosensitive reversible
nLof 2070 photosensitive and e-beam, reversible
ZEP 520A e-beam positive
PMMA e-beam positive
HSQ e-beam reversible
PI-2610 Dose (30g.) non photosensitive
PI-2611 Dose (30g.) non photosensitive
PI-2731 Dose (30g.) negative
GM1040 SU8 dose (60g.) negative tone epoxy
GM1060 SU8 dose (90g.) negative tone epoxy
GM1070 SU8 dose (150g.) negative tone epoxy
GM1075 SU8 dose (150g.) negative tone epoxy
MCC SU8-2007 dose (60g) negative tone epoxy
MCC SU8-2015 dose (90g.) negative tone epoxy
MCC SU8-2035 dose (90g) negative tone epoxy
MCC SU8-50 dose (150g.) negative tone epoxy
LOR 5A non photosensitive
Developer MP 351 developer for AZ15xx series
Developer MIF CD 26 developer for S 18xx series
Developer MIF 726 developer for AZ15xx, S18xx, nLof20xx series
Developer AZ 400K developer AZ92xx series
PGMEA developer for SU8 (1-Methoy-2-Propanol Acetat)
HMDS Primer
VM651 Primer
TI-prime Primer

Solvents

Product Composition
Isopropanol MOS C3H8O
Aceton MOS C3H6O
Remover 1165 PGMEA, NMP 93%
EC Solvent  


II. Wafers

Silicon Wafers

Name Diameter [mm] Thickness [µm] Orientation Conductivity type, Dopant Resistivity range [ohm.cm]
Silicon test wafers,
100/P/SS/01-100
100 ± 0.5 525 ± 25 <100> P or N
Boron or Phosphorous
0.1 - 100
Silicon prime wafers,
100/P/DS/1-10
100 ± 0.2 380 ± 10 <100> P
Boron    
1 - 10
Silicon prime wafers,
100/P/SS/01-05
100 ± 0.2 525 ± 20 <100> P
Boron
0.1 - 0.5
Silicon prime wafers,
100/P/DS/01-05
100 ± 0.2 380 ± 10 <100> P
Boron
0.1 -0.5
Silicon prime wafers,
 100/P/SS/15-25
100 ± 0.2 525 ± 20 <100> P
Boron
15 - 25
Silicon prime wafers,
 150/P/SS/15-25
150 ± 0.2 675 ± 20 <100> P
Boron
15 - 25

SOI Wafers

WARNING : For SOI wafers, the Laser marking is on BACK SIDE
Name Diameter [mm] SOI Layer
Thickness [µm]
Buried oxide
Thickness [µm]
Orientation Conductivity type, Dopant Resistivity range [ohm.cm]
SOI wafers,
SOI-380-1-10
100 ± 0.5 10 ± 0.7 1 ± 0.05 <100> P
Boron
1 - 10
SOI wafers,
SOI 380-2-50
100 ± 0.5 50 ± 0.7 2 ± 0.05 <100> P
Boron
1 - 10
SOI wafers,
SOI 380-2-100
100 ± 0.5 100 ± 0.7 2 ± 0.05 <100> P
Boron    
1 - 10
SOI wafers,
SOI 380-2-150
100 ± 0.5 150 ± 0.7 2 ± 0.05 <100> P
Boron
1 - 10
SOI wafers,
SOI 380-2-200
100 ± 0.5 200 ± 1 2 ± 0.05 <100> P
Boron
1 -10
SOI wafers*,
SOI 625-1-1
100 ± 0.5 1 ± 0.05 1 ± 0.1 <100> P
Boron
14 -22
SOI wafers*,
SOI 725-1-1-HR
100 ± 0.5 1 ± 0.02 1 ± 0.1 <100> Top Silicon: P, Boron
Handle Silicon: N/A
Top Silicon: 8.5 -11.5
Handle Silicon: 750 - 1000
SOI wafers*,
SOI 725-2-0.34
100 ± 0.5 0.34 ± 0.02 2 ± 0.05 <100> P
Boron
8.5 -11.5
SOI wafers*,
SOI 725-0.145-0.088
100 ± 0.5 0.088 ± 0.012 0.145 ± 0.006 <100> P
Boron
8.5 -11.5
SOI wafers*,
SOI 725-2-0.22
100 ± 0.5 0.220 ± 0.020 2 ± 0.05 <100> P
Boron
8.5 -11.5

* These SOI wafers come from down-sizing of 150mm/200mm wafers. Left-over of various shape/size for piece-part/chip processing is also available.

Glass Wafers

See CMi nomenclature for flats
Name Diameter [mm] Thickness [µm] Composition Orientation Log Resistivity [ohm.cm]
Float glass wafers,
FLOAT/DS
100  0/-0.3 550 ± 10 SiO2: 70.8%, Na2O: 13.9%, K 2O: 0.4%, CaO: 8.4%, MgO: 4.4%, Al2O3 : 1.5%, Fe2O3: 0.08%, SO3: 0.3% none, amorphous 9.7 at 1000 Hz, 25 °C
Borosilicate wafers,
D263T/DS
100 ± 0.2 145 ± 15 Very close to Pyrex composition none, amorphous 8.2, 250 °C
6.5, 350 °C
Borofloat 33,
Borofloat/DS
100 ± 0.5 500 ± 20 Very close to Pyrex composition none, amorphous close to Pyrex
NB: Pyrex composition is SiO2: 81%, Na2O: 4%, Al 2O3: 2%, B2O3: 13% + traces elements.
Pyrex Log resistivity = 6.1 ohm.cm at 250 °C.

Fused Silica Wafers : Pure amorphous SiO2

See CMi nomenclature for flats
Name Diameter [mm] Thickness  [µm] TTV (total thickness variation) [µm] Polishing RMS [Ǻ]
Fused Silica wafers 100 ± 0.5 525 ± 50 6 12

Masks

Name Specifications
Chrome Blank 5'' Nanofilm SLM 5 click here
Chrome Blank 7'' Nanofilm SLM 7