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Tepla plasma stripper user manual

Contents: CMI

  1. Introduction
  2. Equipment description
  3. Standard processes
  4. How to use the system
  5. Allowed materials
  6. Forbidden processes

I. Introduction CMI

The Tepla 300 uses high frequency plasma. Main applications are:


Materials that deteriorate easily upon exposure to oxygen (Ag, Cu, Cr, Fe,...) should not be processed in this machine!
This equipment is NOT micro-electronic compatible. For micro-electronic compatibility, please use Oxford PRS900 (zone 2).
Processes that have not been tested are: isotropic etching of glass, ceramic, SiO2, Si3N4, Si.

II. Equipment description CMI

Electrodposition Cu - Ni

Quartz primary vacuum chamber (dimension: Dint. 245 mm x Prof. 380 mm)
Plasma frequency: 2.45 GHz
Plasma power:  200 to 1000 W
Gas : O2 and CF4 ( max. flow 500 ml/min)
Quartz holders for 25 wafers from 75 mm to 100 mm

Electrodposition Cu - Ni

III. Standard processes CMI

RESIST STRIP

Positive resists etch rate = 350 nm/min depending on the number of wafers to be processed in the batch.
Program Gas 1 (O2, ml/min) Gas 2 (CF4, ml/min) Power (W) Time (min:sec) EPD (0, 1, 2) Remarks
01 400 0 500 01:00 1 1min over-etch after end point detection
02 00:30 0 Fixed time of resist strip
03 01:00
04 04:00
05 07:00
06 10:00
08 20:00
07 500 1000 30:00 Strip for 25 wafers batch

Si3N4 STRIP

 Si3N4 etch rate= 230nm/min epending on the number of wafers to be processed in the batch.
Uniformity: 16%
Selectivity to SiO2: 3.5
Selectivity to resist: < 1 !
Program Gas 1 (O2, ml/min) Gas 2 (CF4, ml/min) Power (W) Time (min:sec) EPD (0, 1, 2) Remarks
21 35 200 400 00:30 0 Fixed time of strip
22 00:50
23 01:20

SURFACE ACTIVATION

Program Gas 1 (O2, ml/min) Gas 2 (CF4, ml/min) Power (W) Time (min:sec) EPD (0, 1, 2)
10 400 0 1000 01:00 0
11 00:30
12 00:15
13 750 01:00
14 00:30
15 00:15
16 600 01:00
17 00:30
18 00:15
25 200 100 00:10
26 400 500 00:45
27 00:30
28 00:15
29 00:10
30 00:05
35 350 01:00
36 00:45
37 00:30
38 00:15
39 00:10
40 00:05
41 150 00:10
42 200 00:45
43 00:30
44 00:15
45 00:10
46 00:05

IV. How to use the system CMI

The substrates are processed following this procedure:
  1. Login on the Tepla plasma stripper on zone 11 computer
  2. Activate the rectangular green "I" button on the machine
  3. The machine is on stand-by mode ("Idle" mode). Kill this mode by pressing the "abort" button
  4. Prepare the quartz carrier: CAUTION, it is very fragile! Use the fork to delicately manipulate the carrier.
    Materials that deteriorate easily upon exposure to oxygen (Ag, Cu, Cr, Fe,...) should not be processed in this machine!
  5. Select the program: press "enter", use the arrows to make your choice in the menu and press "enter" to validate
    • programs 1 to 8 : resist
    • programs 21 to 23: Si3N4
    • programs 10 to 18 and 25 to 46: surface activation
  6. Start the process by pressing "run" (close the door to start the pumping). You can stop the process at anytime by pressing "abort"
  7. The chamber returns automatically at atmospheric pressure
  8. Take back the quartz carrier (CAUTION, it is hot: delicately use the fork) and your substrates
  9. Check the cleanliness of the chamber
  10. Put the equipment in stand-by mode: press "enter", use the arrows to select "idle mode" and press "enter" (close the door to start the pumping)
  11. Perform Tepla logout on zone 5 computer

V. Allowed materials CMI

Wafers: Si, glass, Pyrex, without metallic layers if possible.
Materials that deteriorate easily upon exposure to oxygen (Ag, Cu, Cr, Fe,...) should not be processed in this machine!
Plastics foils: Caution, special holder and limited power (material fusion)

VI. Forbidden processes CMI

Processes that use the following equipments: These processes must use the Oxford plasma (zone 2)