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TEL Unity Me, dry etcher, fluorine chemistry

TEL Unity Me, dry etcher, fluorine chemistry TEL Unity Me, dry etcher, fluorine chemistry

Contents: CMI

  1. Introduction
  2. DRM chamber
  3. SCCM chamber
  4. Photos gallery

I. Introduction CMI

TEL Unity Me system is an automatic plasma etching production tool from Tokyo Electronic (TEL). As shown in figure 1, the tool contains two cassette loaders (C1-100mm wafers and C2-200mm wafers), one transfer chamber (T/C), and two process modules (P1-100mm and P2-200mm). P1 is a DRM (Dipole Ring Magnet) chamber, and P2 is a SCCM (Super Capacitively Coupled Module) chamber. Both chambers designs are optimized for etching dielectrics (e.g. SiO2 and SixNy).

TEL Unity Me, dry etcher, fluorine chemistry

Figure 1: top view of the TEL Unity Me etcher

II. DRM chamber for 100mm wafers processing

DRM is an RIE chamber (Reactive Ion Etching) with assistance of a magnetic field. It is structured as shown in the figure 2.

TEL Unity Me, dry etcher, fluorine chemistry

Figure 2: DRM chamber

Available process gases: C4F8 [30 sccm], CF4 [100 sccm], CHF3 [100 sccm], CH2F2 [100 sccm], O2 [30 sccm], N2 [100 sccm], Ar [1000 sccm], O2 [1000 sccm].

III. SCCM chamber for 200mm wafer processing

Figure 3 shows SCCM chamber configuration. RF power of 2 MHz is applied through the matcher to the lower elctrode. RF power of 60 MHz is applied similarly through the matcher to the upper electrode. Because the upper and the lower power rode lines are sepparetely connected to the ground potential through the high frequency and low frequency filters, the relative high frequency power supply will not enter the power supply of the opposite side. The wafer is placed on the lower electrode, and remains on it by electrostatic clamping.

TEL Unity Me, dry etcher, fluorine chemistry

Figure 3: SCCM chamber

Available process gases: C4F8 [30 sccm], CF4 [100 sccm], CHF3 [100 sccm], CH2F2 [100 sccm], O2 [30 sccm], N2 [100 sccm], Ar [1000 sccm], O2 [1000 sccm],

IV. Photos gallery

TEL Unity Me, dry etcher, fluorine chemistry

Figure 4: High Aspect Ratio etching in SiO2