DWL200 user guide

Heidelberg DWL200

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Heidelberg DWL200

Organization distinctive: Overnight writing in batch mode for very high resolution Standard exposure with 1.2µm spot size Extension for exposure 0.8 ≤ spot size ≤ 1.2µm (added charge)

An introduction to LASER writing at CMI

DWL200 is an optical pattern generator based on a fast LASER scanner. Two configuration with Gaussian spot size of 2 µm (10mm Head) or 0.8 µm (4mm Head) are available. Applications are as follow:

• Cr-blank (5x5" or 7x7") or wafers ( 100 or 150 mm diameter)
• Direct writing on wafers for g, h-line photoresist
• Single field or step and repeat field (each field can be exposed, align with different parameters)
• Global wafer alignement (X, Y and Theta) and Field aligment (X,Y)
• Distance and orthogonality measurements

Components of the system are as follow:

(1) Standard Hardware elements:

• LASER Kr light source (ab. 400mW @ 413 nm)
• Solid State Wavelength Stabilized LASER diode (max. 110mW @ 405 nm)
• XY Table with Mach-Zender interferometer position feedback (20nm 3 sigma)
• 0.1 °C thermal stability (4 hours)
• Autofocus system for fast auto-levelling
• High Data flow synchronous with mechanical (Y axis) and electronical (X axis) scan
• Automatic loading up to 10 Cr-blanks for mask fabrication or 25 wafers in direct writing mode
• Coupling of CCD camera for alignment in direct writing mode

(2) Extension:

• Solid State diode light source (max. 110mW @ 408nm)

(3) Software: 

• Conversion software from standard layout format (linux workstation outside the cleanroom)
• Graphic user interface with specific environnement for repetitive application (Windows 7)
• Stand-alone computer system to drive the equipment (OS9)

Key Features: Two Light Sources

• Continous LASER (Kr gas) source light. Wavelengh λ=413nm for very high resolution or low sensitivity resist (thick layer or light sensitive epoxy). Gaussian beam - aging effects
• Continous LASER (Solid State Diode) source light. Wavelengh λ=405nm for high speed, low resolution mask or direct writing on thin resist. Round shaped spot with XY assymetry

 Table I: Configuration list

Application	Writing mode (x=M, W, G)	Krypton (65 - 450mW)	Diode (110mW max)
Cr-mask	Low to High Resolution	DWL_KRY4.10x, DWL_KRY2.10x, DWL_KRY4.04x	DWL_DIO4.10x, DWL_DIO2.10x, DWL_DIO4.04x
	Max. Resolution	DWL_KRY2.04x
AZ1512 High speed resist	High to very high Speed		DWL_DIO4.10x, DWL_DIO2.10x
	High to max Resolution	DWL_KRY4.04x, DWL_KRY2.04x
AZ ECI (thickness <2.0µm)	Very high Speed	DWL_KRY4.10x
	Low to High Resolution	DWL_KRY2.10x, DWL_KRY4.04x	DWL_DIO2.10x, DWL_DIO4.04x
	Max. Resolution	DWL_KRY4.04x

Color key

Ok

Not recommended

Not applicable (power low)

Key Features: Driving

• High speed blinking and scanning
• Pattern Generator for CIF, GDSII, (DXF, and other) formats
• 800nm minimum pixel size
• 200nm minimum fabrication grid
• Direct Write Mark Detection & Alignment Software
• Cassette carriers for square plates 5x5" and 7x7" (suitable for respectively 100mm and 150mm wafer)
• Cassette carriers for 100mm, 150mm wafers
• Housed in a custom cleanroom which maintains a temperature of 21°C ± 0.1°C

Configuration, writing speed and fabrication grid (Mask fabrication)

 Table II: Properties of available configurations according to available writing head and light source. Writing time are given for a 100x100mm layout size.

Writing head (focal length)	4mm				10mm
Code for Resolution Mode	DWL_KRY2.04x Max. Resolution		DWL_KRY4.04x High Resolution	DWL_DIO4.04x High Resolution	DWL_KRY2.10x High Speed	DWL_DIO2.10x High Speed	DWL_KRY4.10x Very high Speed	DWL_DIO4.10x Very high Speed
Adresse Grid (after conversion)	200nm		200nm	200nm	500nm	500nm	500nm	500nm
Spot size and / minimum line half pitch (Resolution limit)	800nm / 800nm		800nm / 1000nm	1500nm / 1800nm	1800nm / 1800nm	2400nm / 2500nm	2000nm / 2000nm	2400nm / 2800nm
CD uniformity other 1000 grid pixel ([%], max-min/(max+min))	30%		25%	better than 10%	25%	better than 10%	25%	better than 10%
CD offset from linearity ([nm], chessboard test layout)	100 ... 250		100 ... 250	50 ... 150	250 ... 800	100 ... 400	250 ... 800	100 ... 400
Feature edge roughness (pitch[nm]; amplitude[nm] )	(200;200)		(400;300)	(400;300)	(500;500)	(1000;700)	(1000;800)	(1000;1200)
100x100mm layout on Cr-plate	232 min.		116 min.	116 min.	56 min.	56 min.	28 min.	28 min.

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Please follow the following links to find out more:

Heidelberg DWL200

Prepare your layout

Transform data

Clean Room Check list

Principle & Photo gallery